GB/T 29054-2012 Replaced National standards

GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick

GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick

Publish Date: 2012-12-31 Implement Date: 2013-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29054-2012
Standard Type: National standards
Standard Status: Replaced
is_force_gb: no
CCS Name: Element semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2012-12-31
Implement Date: 2013-10-01
Pages: 6 pages

Scope

This standard specifies the product classification, technical requirements, test methods, inspection rules, and marking, packaging, transportation, and storage of solar-grade cast polycrystalline silicon blocks.
This standard applies to polycrystalline silicon blocks prepared using casting technology.

Development Information

Word Count: 9 Thousand words Pages: 6 pages

Superseded by the following standards

Referenced Standards

SEMI PV1-0709 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

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