GB/T 29850-2013 Active National standards

GB/T 29850-2013 Test method for measuring compensation degree of silicon materials used for photovoltaic applications

GB/T 29850-2013 Test method for measuring compensation degree of silicon materials used for photovoltaic applications

Publish Date: 2013-11-12 Implement Date: 2014-04-15 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29850-2013

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2013-11-12

Implement Date: 2014-04-15

Pages: 6 pages

Scope

This standard specifies the measurement and analysis methods for the compensation degree of silicon materials used in photovoltaic cells.
This standard is applicable to the measurement and analysis of the compensation degree of non-doped silicon materials used in photovoltaic cells.

Development Information

Word Count: 10 Thousand words Pages: 6 pages

Referenced Standards

GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

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