GB/T 11093-1989
Replaced
GB/T 12965-2018
Active
National standards
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
Basic Information
Standard Code:
GB/T 12965-2018
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2018-09-17
Implement Date:
2019-06-01
Pages:
11 pages
Scope
This standard specifies the grades and classification, requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) of silicon single-crystal cutting wafers and polishing wafers (referred to as silicon wafers). This standard applies to circular silicon single-crystal cutting wafers and polishing wafers with a diameter of no more than 200 mm, prepared by the direct-pulling method and the floating zone melting method (including neutron transmutation doping and gas phase doping). The products are mainly used for manufacturing transistors, rectifier devices, etc., or further processed into polished wafers.
Development Information
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 12962-1996 Monocrystalline silicon
GB/T 12962-2005 Monoccrystalline silicon
GB/T 12962-2015 Monocrystalline silicon
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning
GB/T 32279-2015 Specification for order entry format of silicon wafers
GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method
GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
YS/T 26-1992
YS/T 26-2016 Test methods for edge contour of silicon wafers
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced