GB/T 1558-2009 Replaced National standards

GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 1558-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 7 pages

Scope

This standard specifies the infrared absorption measurement method for the content of substituted carbon atoms in silicon.
This standard is applicable to the determination of the content of substituted carbon atoms in p-type silicon wafers with resistivity higher than 3 Ω·cm and n-type silicon wafers with resistivity higher than 1 Ω·cm. For silicon wafers with low precision requirements, the content of substituted carbon atoms in silicon wafers with resistivity greater than 0.1 Ω·cm can be measured. Since carbon may also exist in interstitial positions, this method cannot determine the total carbon content.
This standard is also applicable to the determination of the content of substituted carbon atoms in polycrystalline silicon, but the carbon in its grain boundaries cannot be determined either.
The effective range of carbon atom content measured by this standard is: from 5×1015 atoms·cm-3 (0.1 ppma) of substituted carbon atoms in silicon at room temperature to the maximum solubility of carbon atoms, and the detection limit at 77 K is 5×1014 atoms·cm-3 (0.01 ppma).