YS/T 15-2015 Test method for thickness of epitaxial layers and diffused layers by angle lap stain

YS/T 15-1991 Measurement of Silicon Epitaxial Layer and Diffusion Layer Thickness using Grinding and Polishing Staining Method

GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method