GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry

Scope

This standard specifies the method for determining the content of metal elements on the surface of silicon wafers by inductively coupled plasma mass spectrometry.
This standard is applicable to the determination of trace metal elements such as sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, and copper on the surface of polished silicon single crystals and epitaxial silicon wafers, with a measurement range of 108 cm-2 to 1013 cm-2. This standard is also applicable to the determination of trace metal elements on the surface of silicon annealed wafers, silicon diffused wafers, and other non-patterned silicon wafers.
Note: The content of metal elements on the surface of silicon wafers is calculated in terms of the number of atoms per square centimeter.

Development Information

Referenced Standards

Related Standards