GB/T 4060-2007 Replaced National standards

GB/T 4060-2007 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron

Publish Date: 2007-09-11 Implement Date: 2008-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 4060-2007

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: Comprehensive Testing of Metal Materials

Publish Date: 2007-09-11

Implement Date: 2008-02-01

Pages: 6 pages

Scope

This standard is applicable to the inspection of the boron base of polycrystalline silicon rods grown on silicon cores by polycrystalline silicon deposition. The effective range of impurity concentration detected by this standard is: 0.002×10-9 to 100×10-9.

Development Information

Word Count: 8 Thousand words Pages: 6 pages

Replace the following standards

GB/T 4060-1983 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron

Superseded by the following standards

GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method

Referenced Standards

GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Related Standards

GB/T 14140.1-1993 Replaced

GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method

Publish Date: 1993-02-06

GB/T 14140.2-1993 Replaced

GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method

Publish Date: 1993-02-06

GB/T 15615-1995 Abolished

GB/T 15615-1995 Test method for measuring flexure strength of silicon slices

Publish Date: 1995-07-12

GB/T 16481-1996 Abolished

GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth

Publish Date: 1996-07-09

GB/T 1550-1997 Replaced

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials

Publish Date: 1997-06-03

GB/T 1553-1997 Replaced

GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

Publish Date: 1997-06-03