GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere

GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere

GB/T 11446.1-2013 Electronic grade water GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 4060-1983 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2007 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method GB/T 4842-1995 Pure argon GB/T 4842-2006 Argon GB/T 4842-2017 Argon GB/T 8979-1996 Pure nitrogen GB/T 8979-2008 Pure nitrogen and high purity nitrogen and ultra pure nitrogen GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method GB/T 8979-2025 Pure nitrogen,high purity nitrogen and ultra pure nitrogen