GB/T 35308-2017 Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 8758-1988 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry GB/T 31227-2014 Test method for the surface roughness by atomic force microscope for sputtered thin films