YS/T 14-2015 Active Industry standards-Non-ferrous metals

YS/T 14-2015 Test method for thickness of heteroepitaxy layers and polycrystalline layers

YS/T 14-2015 Test method for thickness of heteroepitaxy layers and polycrystalline layers

Publish Date: 2015-04-30 Implement Date: 2015-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: YS/T 14-2015

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2015-04-30

Implement Date: 2015-10-01

Pages: 6 pages

Scope

This standard specifies the measurement methods for the thickness of heteroepitaxial layers and silicon polycrystalline layers.
This standard is applicable to the measurement of the thickness of heteroepitaxial layers and silicon polycrystalline layers, where the interface layer between the substrate and the deposited layer is less than 100 nm. The thickness measurement range is 1 μm to 100 μm.

Development Information

Word Count: 8 Thousand words Pages: 6 pages

Replace the following standards

YS/T 14-1991 The method for measuring the thickness of the dopant-enriched epitaxial layer and the silicon eutectic layer

Referenced Standards

GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

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