GB/T 6617-1995 Replaced National standards

GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe

Publish Date: 1995-04-18 Implement Date: 1995-12-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6617-1995

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: Non-ferrous metals

Publish Date: 1995-04-18

Implement Date: 1995-12-01

Pages: 8 pages

Development Information

Word Count: 12 Thousand words Pages: 8 pages

Replace the following standards

GB 6617-1986

Superseded by the following standards

GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe

Referenced Standards

GB 1556 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance YS/T 15-2015 Test method for thickness of epitaxial layers and diffused layers by angle lap stain YS/T 15-1991 Measurement of Silicon Epitaxial Layer and Diffusion Layer Thickness using Grinding and Polishing Staining Method GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

Adopt standards

ASTM F525-1988

Related Standards

GB/T 6455-1986 abolished_transferred

GB/T 6455-1986 Mercury releasing combined strips for getter

Publish Date: 1986-06-07

GB/T 8549-1987 abolished_transferred

GB/T 8549-1987 Metallic powder material—Self-fluxing Fe-Cr-B-Si alloy powder

Publish Date: 1987-12-30

GB/T 13822-1992 Replaced

GB/T 13822-1992 Test specimens for non ferrous diecasting alloys

Publish Date: 1992-11-05

GB/T 4461-1992 Replaced

GB/T 4461-1992 Thermostatic bimetal strips

Publish Date: 1992-11-16

GB/T 14146-1993 Replaced

GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method

Publish Date: 1993-02-06

GB/T 15827-1995 Abolished

GB/T 15827-1995 Ion plating—Color of golden TiN

Publish Date: 1995-12-13