GB/T 43366-2023 General specification for discrete semiconductor devices of space application

GB/T 4023-2015 Semiconductor devices—Discrete devices and integrated circuits—Part 2: Rectifier diodes GB/T 4586-1994 Semiconductor devices Discrete devices—Part 8:Field-effect transistors GB/T 4587-1994 Semiconductor discrete devices and integrated circuits—Part 7:Bipolar transistors GB/T 4589.1-2006 Semiconductor devices—Part 10:Generic specification for discrete devices and integrated circuits GB/T 4937.2-2006 Semiconductor devices—Mechanical and climatic test methods—Part 2:Low air pressure GB/T 4937.3-2012 Semiconductor devices—Mechanical and climatic tests methods—Part 3:External visual examination GB/T 4937.4-2012 Semiconductor devices—Mechanical and climatic test methods—Part 4:Damp heat,steady state,highly accelerated stress test(HAST) GB/T 4937.11-2018 Semiconductor devices—Mechanical and climatic test methods—Part 11:Rapid change of temperature—Two-fluid-bath method GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12:Vibration,variable frequency GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphere GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity） GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devices GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose) GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strength GB/T 4937.20-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20:Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21:Solderability GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strength GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 15291-2015 Semiconductor devices—Part 6:Thyristors GB/T 19403.1-2003 Semiconductor devices—Integrated Circuits—Part11:Section1:Internal visual examination for semiconductor integrated circuits(excluding hybrid circuits) GB/T 20516-2006 Semiconductor devices—Discrete devices—Part 4:Microwave devices GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) IEC 60749-6:2017 IEC 60749-7:2011 IEC 60749-8:2002 IEC 60749-9:2017 IEC 60749-10:2022 IEC 60749-16:2003 IEC 60749-25:2003 IEC 60749-26:2018 IEC 60749-33:2022 IEC 60749-34:2010 IEC 60749-35:2006 IEC 60749-36:2003 IEC 60749-42:2014 QJ 10005-2008 Test guidelines of single event effects induced by heavy ions of semiconductor devices for space applications