YS/T 840-2012 Abolished Industry standards-Non-ferrous metals

YS/T 840-2012 Classification and technical specification for renewable crystal silicon

YS/T 840-2012 Classification and technical specification for renewable crystal silicon

Publish Date: 2012-11-07 Implement Date: 2013-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: YS/T 840-2012

Standard Type: Industry standards

Standard Status: Abolished

is_force_gb: no

CCS Name: Precious metals and their alloys

ICS Name: Other non-ferrous metal products

Publish Date: 2012-11-07

Implement Date: 2013-03-01

Pages: 8 pages

Scope

This standard specifies the technical requirements and classification of recycled silicon materials, testing methods, inspection rules, as well as packaging, marking, transportation, storage, order forms, etc.
This standard applies to recyclable silicon materials generated during the production, processing, and use processes, with sources including carbon-free multi-crystalline silicon (carbon-free raw materials) used in the production of solar-grade silicon crystals, crystal silicon head and tail materials, edge materials, crucible bottom materials, crystal silicon samples, and primary waste silicon wafers, etc.

Development Information

Word Count: 8 Thousand words Pages: 8 pages

Referenced Standards

SEMI PV1 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry GB/T 24582-2023 Test method for measuring surface metal impurity content of polycrystalline silicon—Acid extraction-inductively coupled plasma mass spectrometry method

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