GB/T 11093-1989
Replaced
GB/T 11072-2009
Active
National standards
GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
Basic Information
Standard Code:
GB/T 11072-2009
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
7 pages
Scope
1.1 This standard specifies the product classification, technical requirements, and testing methods for indium antimonide polycrystals, single crystals, and single crystal slices. 1.2 This standard applies to indium antimonide polycrystals prepared by the zone melting method and indium antimonide polycrystals, single crystals, and slices prepared by the direct pulling method for use in the production of infrared detectors and magnetically sensitive components, etc.
Development Information
Replace the following standards
Referenced Standards
GB/T 8759
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 11297.1-2002 Test method for wavefront distortion of laser rods
GB/T 11297.1-2017 Test method for wavefront distortion of laser rods
GB/T 11297.3-2002 Test method for extinction ratio of Nd:YAG laser rods
GB/T 11297.8-2015 Test method for pyroelectric coefficient of pyroelectric materials
GB/T 11297.9-2015 Test method for dielectric tangent of loss angle of pyroelectric materials
GB/T 11297.10-2015 Test method for curie temperature of pyroelectric materials
GB/T 11297.11-2015 Test method for dielectric constant of pyroelectric materials
GB/T 11297.12-2012 Test method for extinction ratio of optical crystal
GB/T 11297.4-1989 Test method fornormal pulse lasing threshold and slope efficiency of Nd:YAG laser rods
GB/T 11297.5-1989 Test method for continuous lasing threshold, slope efficiency and output power of Nd∶YAG laser rods
GB/T 11297.12-1989 Test method forextinction ratio of LN, KDP and KDP electrooptic crystal
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced