GB/T 12962-1996 Replaced National standards

GB/T 12962-1996 Monocrystalline silicon

Publish Date: 1996-11-04 Implement Date: 1997-04-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 12962-1996

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 1996-11-04

Implement Date: 1997-04-01

Pages: 12 pages

Development Information

Word Count: 12 Thousand words Pages: 12 pages

Replace the following standards

GB 12962-1991

Superseded by the following standards

GB/T 12962-2005 Monoccrystalline silicon

Referenced Standards

GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB 1555-79 GB 1556-79 GB 1557-89 GB 1558-83 GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe GB 11073-89 GB/T 12964-1996 GB/T 14844-93 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06