GB/T 31092-2014 Replaced National standards

GB/T 31092-2014 Monocrystalline sapphire ingot

GB/T 31092-2014 Monocrystalline sapphire ingot

Publish Date: 2014-12-22 Implement Date: 2015-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 31092-2014

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-12-22

Implement Date: 2015-09-01

Pages: 24 pages

Scope

This standard specifies the requirements, inspection methods, inspection rules, and marking, packaging, transportation, storage, and quality certificates for sapphire single-crystal ingots, as well as the content of purchase orders (or contracts).
This standard applies to sapphire single-crystal ingots, which can be used to manufacture gallium nitride epitaxial films and other sapphire single-crystal substrate materials (hereinafter referred to as ingots).

Development Information

Word Count: 39 Thousand words Pages: 24 pages

Superseded by the following standards

GB/T 31092-2022 Monocrystalline sapphire bar

Referenced Standards

GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06