GB/T 30652-2014 Replaced National standards

GB/T 30652-2014 Trichlorosilane for silicon epitaxial

GB/T 30652-2014 Trichlorosilane for silicon epitaxial

Publish Date: 2014-12-31 Implement Date: 2015-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30652-2014

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-12-31

Implement Date: 2015-09-01

Pages: 5 pages

Scope

This standard specifies the requirements, test methods, inspection rules, and marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) for silicon epitaxy-grade trichlorosilane (SiHCl3).
This standard applies to silicon epitaxy-grade trichlorosilane (hereinafter referred to as the product) manufactured from crude trichlorosilane through purification.

Development Information

Word Count: 6 Thousand words Pages: 5 pages

Superseded by the following standards

GB/T 30652-2023 Trichlorosilane for silicon epitaxial

Referenced Standards

国务院令第591号　危险化学品安全管理条例 GB 190-1990 Labels for packages of dangerous goods GB 190-2009 Packing symbol of dangerous goods GB/T 191-2000 Packaging—Pictorial marking for handling of goods GB/T 191-2008 Packaging—Pictorial marking for handling of goods GB 16483-2000 General rules for preparation of chemical safety data sheet GB/T 16483-2008 Safety data sheet for chemical products—Content and order of sections GB/T 28654-2012 Trichlorosilane for industrial use GB/T 28654-2018 Trichlorosilane for industrial use GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method YS/T 987-2014 Test method for measuring carbon containing compound in chlorosilane—Determination of methyldichlorosilane YS/T 987-2021 The determination of carbon content in chlorosilanes by gas chromatography-mass spectrometry GB/T 191-2025 Graphical symbols marking for handling and storage of packages GB/T 29056-2025 Determination of impurity content in trichlorosilane for silicon epitaxy—Inductively coupled plasma mass spectrometry

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06