GB/T 11093-1989
Replaced
GB/T 30652-2023
Active
National standards
GB/T 30652-2023 Trichlorosilane for silicon epitaxial
GB/T 30652-2023 Trichlorosilane for silicon epitaxial
Basic Information
Standard Code:
GB/T 30652-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Pages:
9 pages
Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content for silicon epitaxy-grade trichlorosilane (SiHCl 3).
This document applies to silicon epitaxy-grade trichlorosilane (hereinafter referred to as the product) refined and purified from trichlorosilane as a raw material.
Development Information
Replace the following standards
Referenced Standards
GB 190-1990 Labels for packages of dangerous goods
GB 190-2009 Packing symbol of dangerous goods
GB/T 191-2000 Packaging—Pictorial marking for handling of goods
GB/T 191-2008 Packaging—Pictorial marking for handling of goods
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 3723-1999 Sampling of chemical products for industrial use—Safety in sampling
GB 12463-1990 General specifications for transport packages of dangerous goods
GB 12463-2009 General specifications for transport packages of dangerous goods
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB 15258-1999 General rules for preparation of precautionary label for industrial chemicals
GB 15258-2009 General rules for preparation of precautionary label for chemicals
GB 16483-2000 General rules for preparation of chemical safety data sheet
GB/T 16483-2008 Safety data sheet for chemical products—Content and order of sections
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
GB/T 26571-2011 Specification for the shelf life of a specialty gas
GB/T 28654-2012 Trichlorosilane for industrial use
GB/T 28654-2018 Trichlorosilane for industrial use
GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method
GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
GB 30000.19-2013 Rules for classification and labelling of chemicals—Part 19:Skin corrosion/irritation
YS/T 987-2014 Test method for measuring carbon containing compound in chlorosilane—Determination of methyldichlorosilane
YS/T 1059-2015 Determination of total carbon content in trichlorosilane for silicon eqitaxy—Gas chromatographic method
YS/T 1060-2015 Determination of other chlorosilane in trichlorosilane for silicon eqitaxy—Gas chromatographic method
YS/T 987-2021 The determination of carbon content in chlorosilanes by gas chromatography-mass spectrometry
GB/T 191-2025 Graphical symbols marking for handling and storage of packages
GB/T 29056-2025 Determination of impurity content in trichlorosilane for silicon epitaxy—Inductively coupled plasma mass spectrometry
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced