GB/T 4937.25-2025 Active National standards

GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling

GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling

Publish Date: 2025-12-02 Implement Date: 2026-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: GB/T 4937.25-2025
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Semiconductor discrete devices
ICS Name: Integrated Components of Semiconductor Devices
Publish Date: 2025-12-02
Implement Date: 2026-07-01
Pages: 16 pages

Scope

This document describes the ability of semiconductor devices, components, and circuit board assemblies to withstand mechanical stress caused by alternating extreme high and low temperatures. This mechanical stress can lead to permanent changes in their electrical or physical performance. This document generally complies with IEC 60068-2-14, but due to the special requirements of semiconductor devices, the provisions of this document are used. This test method can use the single-chamber method, the two-chamber method, and the three-chamber method for temperature cycling tests of individual components and solder joint interconnections. When conducting temperature cycling tests with the single-chamber method, the load is placed in a fixed test chamber, and hot air, ambient air, or cold air is introduced into the test chamber to heat or cool the load. When conducting temperature cycling tests with the two-chamber method, the load is placed on a movable platform, which moves between two fixed test chambers that maintain set temperatures. When conducting temperature cycling tests with the three-chamber method, the load moves between three test chambers.

Development Information

Word Count: 23 Thousand words Pages: 16 pages

Same series standard

GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND) GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices

Referenced Standards

IEC 60068-2-14

Adopt standards

IEC 60749-25:2003

Related Standards

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