GB/T 25075-2010 Active National standards

GB/T 25075-2010 Gallium arsenide single crystal for solar cell

GB/T 25075-2010 Gallium arsenide single crystal for solar cell

Publish Date: 2010-09-02 Implement Date: 2011-04-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 25075-2010

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2010-09-02

Implement Date: 2011-04-01

Pages: 7 pages

Scope

This standard specifies the classification, technical requirements, inspection methods and rules, as well as marking, packaging, transportation, and storage of gallium arsenide single crystal rods for solar cells (hereinafter referred to as gallium arsenide single crystal rods).
This standard applies to gallium arsenide single crystal round rods used in the manufacture of gallium arsenide solar cells.

Development Information

Word Count: 10 Thousand words Pages: 7 pages

Referenced Standards

GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06