GB/T 39123-2020 Active National standards

GB/T 39123-2020 Specification for cadmium-zinc telluride single crystal material for X-ray and γ-ray detector

Publish Date: 2020-10-11 Implement Date: 2021-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 39123-2020

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Artificial lens

ICS Name: Physics, Chemistry

Publish Date: 2020-10-11

Implement Date: 2021-09-01

Publisher: 国家市场监督管理总局、国家标准化管理委员会

Technical Committee: 全国人工晶体标准化技术委员会(SAC/TC 461)

Pages: 12 pages

Scope

本标准规定了X射线和γ射线探测器用碲锌镉单晶材料的技术要求、质量保证规定和交货准备。
本标准适用于X射线和γ射线探测器用碲锌镉单晶材料。

Development Information

Drafting Units:

西北工业大学、陕西迪泰克新材料有限公司、上海大学

Drafting Persons:

介万奇、谷智、徐亚东、查钢强、王涛、汤三奇、魏登科、闵嘉华、张继军

Word Count: 22 Thousand words Pages: 12 pages

Referenced Standards

GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate

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