GB/T 14139-2009 Replaced National standards

GB/T 14139-2009 Silicon epitaxial wafers

GB/T 14139-2009 Silicon epitaxial wafers

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14139-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 7 pages

Scope

This standard specifies the product classification, technical requirements, test methods, inspection rules, and marking, packaging, transportation, and storage of silicon epitaxial wafers. This standard applies to homogeneous silicon epitaxial wafers with an n-type epitaxial layer (N/N+) grown on an n-type polished silicon substrate and a p-type epitaxial layer (P/P+) grown on a p-type polished silicon substrate. The products are mainly used for the fabrication of silicon semiconductor devices. Other types of silicon epitaxial wafers can be used as reference.

Development Information

Word Count: 12 Thousand words Pages: 7 pages

Replace the following standards

GB/T 14139-1993 Silicon epitaxial wafers

Superseded by the following standards

GB/T 14139-2019 Silicon epitaxial wafers

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12962-1996 Monocrystalline silicon GB/T 12962-2005 Monoccrystalline silicon GB/T 12962-2015 Monocrystalline silicon GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14145-1993 Test method for stacking fault density of epitaxial layers of silicon by interference-contrast microscopy GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14246.1-1993 Information technologh—Portable operating system interface for computer environments—Part 1:System application program interface (POSIX.1) GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance YS/T 24-2016 Test methods for spike of epitaxial layers YS/T 24-1992 The inspection method for extrusion nail defects GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06