GB/T 14139-2019 Silicon epitaxial wafers

GB/T 14139-2009 Silicon epitaxial wafers

GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection SEMI M85 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 19921-2005 Test method of particles on silicon wafer surfaces GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method