GB/T 3656-1983
Replaced
GB/T 35309-2017
Active
National standards
GB/T 35309-2017 Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
GB/T 35309-2017 Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
Basic Information
Standard Code:
GB/T 35309-2017
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
\nMetal material testing
Publish Date:
2017-12-29
Implement Date:
2018-07-01
Pages:
8 pages
Scope
This standard specifies methods for evaluating the concentration of substitutional carbon atoms, donor impurities, and acceptor impurities in granular polycrystalline silicon using zone melting and spectral analysis. This standard is applicable to granular polycrystalline silicon with a size of 600 μm to 3,000 μm. Granular polycrystalline silicon of other sizes can be evaluated in accordance with this standard.
Development Information
Referenced Standards
GB/T 620-1993 Chemical reagent—Hydrofluoric acid
GB/T 620-2011 Chemical reagent—Hydrofluoric acid
GB/T 622-1989 Chemical reagent—Hydrochloric acid
GB/T 622-2006 Chemical reagent—Hydrochloric acid
GB/T 626-1989 Chemical reagent—Nitric acid
GB/T 626-2006 Chemical reagent—Nitric acid
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 4059-1983 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
GB/T 4842-1995 Pure argon
GB/T 4842-2006 Argon
GB/T 4842-2017 Argon
GB/T 6679-2003 General rules for sampling solid chemical products
GB/T 11446.1-1997 Electronic grade water
GB/T 11446.1-2013 Electronic grade water
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced