GB/T 43662-2024 Active National standards

GB/T 43662-2024 Patterned sapphire substrate

GB/T 43662-2024 Patterned sapphire substrate

Publish Date: 2024-03-15 Implement Date: 2024-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 43662-2024

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2024-03-15

Implement Date: 2024-10-01

Pages: 24 pages

Scope

This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content for sapphire patterned substrates (hereinafter referred to as "substrates"). This document is applicable to the research and development, production, testing, inspection, and performance and quality evaluation of sapphire patterned substrates.

Development Information

Word Count: 36 Thousand words Pages: 24 pages

Referenced Standards

GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration GB/T 8758-1988 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 20307-2006 General rules for nanometer-scale length measurement by SEM GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06