GB/T 14264-1993
Replaced
GB/T 4937.29-2025
Active
National standards
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
Price:
$ 84
Basic Information
Standard Code:
GB/T 4937.29-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Pages:
28 pages
Scope
This document describes the test method for current and overvoltage latching of integrated circuits.
This test is a destructive test.
The purpose of this test is to establish a method for judging the latching characteristics of integrated circuits and to define the failure criteria for latching. The latching characteristics are used to evaluate the reliability of the product and to reduce failures caused by latching, such as non-targeted failures (NTF) and electrostatic discharge (EOS) failures.
This test method is mainly applicable to complementary metal-oxide-semiconductor (CMOS) devices. If it is applied to other process technologies, the applicability needs to be confirmed separately.
The latching test is classified according to temperature in Section 4.1, and the failure level criteria are defined in Section 4.2.
Development Information
Same series standard
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly
GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND)
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state
GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
Adopt standards
IEC 60749-29:2011
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active