GB/T 20229-2006 Replaced National standards

GB/T 20229-2006 Gallium phosphide single crystal

GB/T 20229-2006 Gallium phosphide single crystal

Publish Date: 2006-04-21 Implement Date: 2006-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 20229-2006

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2006-04-21

Implement Date: 2006-10-01

Pages: 5 pages

Development Information

Word Count: 7 Thousand words Pages: 5 pages

Superseded by the following standards

GB/T 20229-2022 Gallium phosphide single crystal

Referenced Standards

GJB 3076 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.2-2008 Sampling procedures for inspection by attributes—Part 2:Sampling plans indexed by limiting quality(LQ)for isolated lot inspection GB/T 2828.3-2008 Sampling procedures for inspection by attributes—Part 3:Skip-lot sampling procedures GB/T 2828.4-2008 Sampling procedures for inspection by attributes—Part 4:Procedures for assessment of declared quality levels GB/T 2828.5-2011 Sampling procedures for inspection by attributes—Part 5:System of sequential sampling plans indexed by acceptance quality limit(AQL)for lot-by-lot inspection GB/T 2828.10-2010 Sampling procedures for inspection by attributes—Part 10:Introduction to the GB/T 2828 series of standards for sampling for inspection by attributes GB/T 2828.11-2008 Sampling procedures for inspection by attributes—Part 11:Procedures for assessment of declared quality levels for small population GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06