GB/T 35307-2017 Replaced National standards

GB/T 35307-2017 Granular polysilicon produced by fluidized bed method

GB/T 35307-2017 Granular polysilicon produced by fluidized bed method

Publish Date: 2017-12-29 Implement Date: 2018-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 35307-2017

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2017-12-29

Implement Date: 2018-07-01

Pages: 6 pages

Scope

This standard specifies the terms and definitions, requirements, test methods, inspection rules, and marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) for granular silicon produced by the fluidized bed method. This standard applies to granular polycrystalline silicon products produced by the fluidized bed method using silane gas as the raw material.

Development Information

Word Count: 10 Thousand words Pages: 6 pages

Superseded by the following standards

GB/T 35307-2023 Granular polysilicon produced by fluidized bed method

Referenced Standards

ISO 13322.2 GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry GB/T 35309-2017 Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies

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