GB/T 11093-1989
Replaced
GB/T 35307-2023
Active
National standards
GB/T 35307-2023 Granular polysilicon produced by fluidized bed method
GB/T 35307-2023 Granular polysilicon produced by fluidized bed method
Basic Information
Standard Code:
GB/T 35307-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Pages:
6 pages
Scope
This document specifies the grades, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and accompanying documents and order forms for granular silicon produced by the fluidized bed method.
This document is applicable to granular polycrystalline silicon (hereinafter referred to as granular silicon) produced by the fluidized bed method using trichlorosilane and silane gas as raw materials.
Development Information
Replace the following standards
Referenced Standards
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 21649.2-2017 Particle size analysis—Image analysis methods—Part 2:Dynamic image analysis methods
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry
GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method
GB/T 35309-2017 Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
GB/T 40566-2021 Granular polysilicon produced by fluidized bed method—Determination of hydrogen—Pulse heating inert gas fusion infrared absorption method
GB/T 21649.2-2025 Particle size analysis—Image analysis methods—Part 2:Dynamic image analysis methods
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced