GB/T 11094-2020 Active National standards

GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method

GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method

Publish Date: 2020-09-29 Implement Date: 2021-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 11094-2020

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2020-09-29

Implement Date: 2021-08-01

Pages: 11 pages

Scope

This standard specifies the grades and classification, requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) of GaAs single crystals (hereinafter referred to as GaAs single crystals) and cut pieces.
This standard is applicable to GaAs single crystals and cut pieces used in optoelectronic devices, sensing elements, and other applications.

Development Information

Word Count: 20 Thousand words Pages: 11 pages

Replace the following standards

GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer

Referenced Standards

GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06