GB/T 3656-1983
Replaced
GB/T 14146-2021
Active
National standards
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
Price:
$ 54
Basic Information
Standard Code:
GB/T 14146-2021
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2021-05-21
Implement Date:
2021-12-01
Pages:
13 pages
Scope
This document specifies the method of testing the carrier concentration of silicon epitaxial layers by capacitance-voltage method, including mercury probe capacitance-voltage method and non-contact capacitance-voltage method.
This document is applicable to the testing of carrier concentration in homogeneous silicon epitaxial layers, with a testing range of 4×1013 cm-3 to 8×1016 cm-3, where the thickness of the silicon epitaxial layer is greater than twice the depth of the depletion layer at the test bias. The testing of carrier concentration in silicon single-crystal wafers and homogeneous silicon carbide epitaxial wafers can also be carried out with reference to this document, but the non-contact capacitance-voltage method is not suitable for testing the carrier concentration in homogeneous silicon carbide epitaxial wafers.
Development Information
Replace the following standards
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method
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