GB/T 12962-2005 Monoccrystalline silicon

GB/T 12962-1996 Monocrystalline silicon

GB/T 12962-2015 Monocrystalline silicon

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14143-1993 300～900μm Silicon slices—Measuring of interstitial oxygen content—Infrared absorption method GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers