GB/T 26068-2010 Replaced National standards

GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 26068-2010

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2011-01-10

Implement Date: 2011-10-01

Pages: 23 pages

Scope

1.1 This method is suitable for measuring the carrier recombination lifetime of uniformly doped, polished n-type or p-type silicon wafers. This method is non-destructive and contactless. Under the condition that the sensitivity of the conductivity detection system is sufficient, this method can also be applied to testing the carrier recombination lifetime of cut or polished, corroded silicon wafers.
1.2 The lower limit of the room-temperature resistivity of the tested silicon wafers is determined by the limit of the sensitivity of the detection system, usually between 0.05 Ω·cm and 1 Ω·cm.
Note: This detection method is suitable for measuring the carrier recombination lifetime in the range of 0.25 μs to >1 ms. The shortest measurable lifetime value depends on the shutdown characteristics of the light source and the sampling frequency of the attenuation signal detector, and the longest measurable value depends on the geometric conditions of the sample and the degree of passivation on the surface of the wafer. With appropriate passivation processes, such as thermal oxidation or immersion in appropriate solutions, the lifetime values up to tens of milliseconds can also be measured for polished wafers specified in GB/T 12964 "Polished Silicon Single Crystal Wafers".
1.3 The analysis of the process, the inspection of contamination sources, and the interpretation of measurement data to determine the formation mechanism and nature of impurity centers are not within the scope of this method. This method can only identify the process that introduces contamination under very limited conditions, such as by comparing the carrier recombination lifetime test values before and after a specific process, and identifying certain individual impurity types.