GB/T 26072-2010 Active National standards

GB/T 26072-2010 Germanium single crystal for solar cell

GB/T 26072-2010 Germanium single crystal for solar cell

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 26072-2010

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2011-01-10

Implement Date: 2011-10-01

Pages: 6 pages

Scope

This standard specifies the terminology, product classification, technical requirements, test methods, inspection rules, and marking, packaging, transportation, storage, quality certificates, and order form content for germanium single crystal rods used in solar batteries.
This standard applies to germanium single crystal round rods prepared by the vertical gradient solidification method (VGF) and the direct pulling method (CZ) for use in solar batteries.

Development Information

Word Count: 9 Thousand words Pages: 6 pages

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 5252-1985 Germanium monocrystal—Inspection of dislocation etch pit density GB/T 5252-2006 Germanium monocrystal—Inspection of dislocation etch pit density GB/T 5252-2020 Test method for dislocation density of monocrystal germanium GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 26074-2010 Germanium monocrystal—Measurement of resistivity-DC linear four-point probe GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06