GB/T 30854-2014 Active National standards

GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting

GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting

Publish Date: 2014-07-24 Implement Date: 2015-04-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30854-2014
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Compound semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2014-07-24
Implement Date: 2015-04-01
Pages: 25 pages

Scope

This standard specifies the requirements, inspection methods, and rules for GaN-based epitaxial wafers for LED lighting (hereinafter referred to as epitaxial wafers), as well as their marking, packaging, transportation, storage, quality certificates, and the content of purchase orders (or contracts).
This standard applies to GaN-based epitaxial wafers for LED lighting.

Development Information

Word Count: 46 Thousand words Pages: 25 pages

Referenced Standards

GB/T 191-2000 Packaging—Pictorial marking for handling of goods GB/T 191-2008 Packaging—Pictorial marking for handling of goods GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6619-1995 Test methods for bow of silicon slices GB/T 6619-2009 Test methods for bow of silicon wafers GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials SJ/T 11399-2009 SJ/T 11399-2009 Semiconductor Light Emitting Diode Chip Test Method GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 191-2025 Graphical symbols marking for handling and storage of packages GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

Contact Us