GB/T 11093-1989
Replaced
GB/T 30854-2014
Active
National standards
GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting
GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting
Basic Information
Standard Code:
GB/T 30854-2014
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2014-07-24
Implement Date:
2015-04-01
Pages:
25 pages
Scope
This standard specifies the requirements, inspection methods, and rules for GaN-based epitaxial wafers for LED lighting (hereinafter referred to as epitaxial wafers), as well as their marking, packaging, transportation, storage, quality certificates, and the content of purchase orders (or contracts).
This standard applies to GaN-based epitaxial wafers for LED lighting.
Development Information
Referenced Standards
GB/T 191-2000 Packaging—Pictorial marking for handling of goods
GB/T 191-2008 Packaging—Pictorial marking for handling of goods
GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
SJ/T 11399-2009 SJ/T 11399-2009 Semiconductor Light Emitting Diode Chip Test Method
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 191-2025 Graphical symbols marking for handling and storage of packages
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced