GB/T 16595-2019 Active National standards

GB/T 16595-2019 Specification for a universal wafer grid

GB/T 16595-2019 Specification for a universal wafer grid

Publish Date: 2019-03-25 Implement Date: 2020-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 16595-2019

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2019-03-25

Implement Date: 2020-02-01

Pages: 7 pages

Scope

This standard specifies a grid pattern that can be used to quantitatively describe surface defects on circular semiconductor wafers. This standard is applicable to silicon wafers with a nominal diameter of 100 mm to 200 mm, as well as wafers made from other semiconductor materials.

Development Information

Word Count: 14 Thousand words Pages: 7 pages

Replace the following standards

GB/T 16595-1996 Specification for a universal wafer grid

Referenced Standards

GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 14139-1993 Silicon epitaxial wafers GB/T 14139-2009 Silicon epitaxial wafers GB/T 14139-2019 Silicon epitaxial wafers GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06