GB/T 7576-2026 Pending National standards

GB/T 7576-2026 Discrete semiconductor devices—Blank detail specification for high power bipolar transistors

GB/T 7576-2026 Discrete semiconductor devices—Blank detail specification for high power bipolar transistors

Publish Date: 2026-03-31 Implement Date: 2026-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: GB/T 7576-2026
Standard Type: National standards
Standard Status: Pending
is_force_gb: no
CCS Name: Semiconductor discrete devices
ICS Name: Diode
Publish Date: 2026-03-31
Implement Date: 2026-10-01
Pages: 20 pages

Scope

This document specifies the requirements for formulating detailed specifications for high-power bipolar transistors, the test conditions and inspection requirements, as well as packaging, transportation, and storage.
This document is applicable to the formulation of detailed specifications for high-power bipolar transistors.

Development Information

Word Count: 27 Thousand words Pages: 20 pages

Replace the following standards

Referenced Standards

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