GB/T 6256-1986
Active
GB/T 7576-2026
Pending
National standards
GB/T 7576-2026 Discrete semiconductor devices—Blank detail specification for high power bipolar transistors
GB/T 7576-2026 Discrete semiconductor devices—Blank detail specification for high power bipolar transistors
Price:
$ 43.00
Basic Information
Standard Code:
GB/T 7576-2026
Standard Type:
National standards
Standard Status:
Pending
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Diode
Publish Date:
2026-03-31
Implement Date:
2026-10-01
Pages:
20 pages
Scope
This document specifies the requirements for formulating detailed specifications for high-power bipolar transistors, the test conditions and inspection requirements, as well as packaging, transportation, and storage.
This document is applicable to the formulation of detailed specifications for high-power bipolar transistors.
Development Information
Replace the following standards
Referenced Standards
GB/T 249-2017 The rule of type designation for discrete semiconductor devices
GB/T 249-2026 Rule of type designation for discrete semiconductor devices
GB/T 2423.2-2008 Environmental testing for electric and electronic products—Part 2:Test methods—Tests B:Dry heat
GB/T 2423.5-1995 Environmental testing for electric and electronic products—Part 2:Test methods—Test Ea and guidance:Shock
GB/T 2423.5-2019 Environmental testing—Part 2:Test methods—Test Ea and guidance:Shock
GB/T 2423.15-1995 Environmental testing for electric and electronic products—Part 2:Test methods—Test Ga and guidance:Acceleration, steady state
GB/T 2423.15-2008 Environmental testing for electric and electronic products—Part 2:Tests methods—Test Ga and guidance: Acceleration,steady
GB/T 2423.21-1991 Basic environmental testing procedures for electric and electronic products—Test M:Low air pressure
GB/T 2423.21-2008 Environmental testing for electric and electronic products—Part 2:Test methods—Test M:Low air pressure
GB/T 2423.21-2025 Environmental testing—Part 2:Test methods—Test M:Low air pressure
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
GB/T 4589.1-2006 Semiconductor devices—Part 10:Generic specification for discrete devices and integrated circuits
GB/T 4937.3-2012 Semiconductor devices—Mechanical and climatic tests methods—Part 3:External visual examination
GB/T 4937.4-2012 Semiconductor devices—Mechanical and climatic test methods—Part 4:Damp heat,steady state,highly accelerated stress test(HAST)
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.9-2026 Semiconductor devices—Mechanical and climatic test methods—Part 9:Permanence of marking
GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12:Vibration,variable frequency
GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphere
GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity)
GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devices
GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strength
GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21:Solderability
GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strength
GB/T 4937.23-2023 Semiconductor devices—Mechanical and climatic test methods—Part 23:High temperature operating life
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testing
GB/T 4937.31-2023 Semiconductor devices—Mechanical and climatic test methods—Part 31:Flammability of platic-encapsulated devices(internally induced)
GB/T 4937.32-2023 Semiconductor devices—Mechanical and climatic test methods—Part 32:Flammability of platic-encapsulated devices(externally induced)
GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34: Power cycling
GB/T 4937.35-2024 Semiconductor devices—Mechanical and climatic test methods—Part 35:Acoustic microscopy for plastic encapsulated electronic components
GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices
IEC 60749-5
GB/T 4023.1-2026 Discrete semiconductor devices—Part 1:Sectional specification
GB/T 7581-2026 Dimensions of outlines for discrete semiconductor devices
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished