GB/T 46611-2025
Active
National standards
GB/T 46611-2025 Lithium niobate single-crystal thin film for electro-optic modulator
GB/T 46611-2025 Lithium niobate single-crystal thin film for electro-optic modulator
Price:
$ 56.00
Basic Information
Standard Code:
GB/T 46611-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Artificial lens
ICS Name:
Special materials for electronic technology
Publish Date:
2025-10-31
Implement Date:
2026-05-01
Pages:
28 pages
Scope
This document specifies the requirements for lithium niobate single-crystal thin films used in electro-optic modulators, the rules for inspection and testing, packaging, labeling/marking, storage, and transportation requirements, and describes the testing methods.
This document applies to lithium niobate thin films with a thickness of 100 nm to 1,000 nm and a diameter of 76.2 mm, 100.0 mm, 150.0 mm, and 200.0 mm, which are used in electro-optic modulators with the same composition of lithium niobate single crystals in the X-cut direction. Lithium niobate single-crystal thin films of other specifications shall be implemented in accordance with this document.
Development Information
Referenced Standards
GB/T 191-2008 Packaging—Pictorial marking for handling of goods
GB/T 1185-2006 Surface imperfections of optical elements
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 20919-2007 External micrometer with electronic digital display
GB/T 20919-2018 External micrometer with electronic digital display
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30118-2013 Single crystal wafers for surface acoustic wave(SAW) device applications—Specifications and measuring methods
GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates
GB/T 40279-2021 Test method for thickness of films on silicon wafer surface—Optical reflection method
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
Related Standards
GB/T 2413-1981
Active
GB/T 3389.4-1982
Replaced
GB/T 3389.4-1982 Test methods for the properties of piezoelectric ceramics—Longitudinal length extension vibration mode for rod
GB/T 5594.1-1985
Active
GB/T 5594.1-1985 Test methods for properties of structure ceramic used in electronic components—Test method for gas-tightness
GB/T 5594.2-1985
Active
GB/T 5594.2-1985 Test methods for properties of structure ceramic used in electronic components—Test method for Youngs elastic modulus and Poisson ratio
GB/T 5594.3-1985
Replaced
GB/T 5594.3-1985 Test methods for properties of structure ceramic used in electronic components—Test method for mean coefficient of linear expansion
GB/T 5594.4-1985
Replaced