GB/T 11093-1989
Replaced
GB/T 12963-2009
Replaced
National standards
GB/T 12963-2009 Specification for polycrystalline silicon
GB/T 12963-2009 Specification for polycrystalline silicon
Basic Information
Standard Code:
GB/T 12963-2009
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
5 pages
Scope
This standard specifies the product classification, technical requirements, test methods, inspection rules, and marking, transportation, and storage of polysilicon. This standard applies to polysilicon produced by hydrogen reduction from trichlorosilane or silicon tetrachloride.
Development Information
Replace the following standards
Superseded by the following standards
Referenced Standards
ASTM F1723
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 4059-1983 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
GB/T 4060-1983 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron
GB/T 4060-2007 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron
GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method
GB/T 4061-1983 Polycrystalline silicon—Examination method—Assessment of sandwiches on cross-section by chemical corrosion
GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Adopt standards
SEMI M16-1103:2003
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced