GB/T 12963-2014 Electronic-grade polycrystalline silicon

GB/T 12963-2009 Specification for polycrystalline silicon

GB/T 12963-2022 Electronic-grade polycrystalline silicon

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 4059-1983 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere GB/T 4060-1983 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2007 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method GB/T 4061-1983 Polycrystalline silicon—Examination method—Assessment of sandwiches on cross-section by chemical corrosion GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry GB/T 24582-2023 Test method for measuring surface metal impurity content of polycrystalline silicon—Acid extraction-inductively coupled plasma mass spectrometry method