GB/T 11093-1989
Replaced
GB/T 20230-2022
Active
National standards
GB/T 20230-2022 Indium phosphide single crystal
GB/T 20230-2022 Indium phosphide single crystal
Basic Information
Standard Code:
GB/T 20230-2022
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2022-03-09
Implement Date:
2022-10-01
Pages:
12 pages
Scope
This document specifies the grades, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and accompanying documents and order forms for indium phosphide single crystals.
This document is applicable to indium phosphide single crystal ingots and polished wafers used in the production of optoelectronic and microelectronic devices.
Development Information
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers
SJ/T 11488-2015 Resistivity, Hall coefficient, and mobility testing methods for semi-insulating gallium arsenide
GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced