GB/T 11093-1989
Replaced
GB/T 47097-2026
Active
National standards
GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers
GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers
Price:
$ 36.00
Basic Information
Standard Code:
GB/T 47097-2026
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2026-01-28
Implement Date:
2026-08-01
Pages:
16 pages
Scope
This document specifies the grades and classification, technical requirements, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content of aluminum nitride single-crystal polished wafers (hereinafter referred to as "polished wafers"), and describes the corresponding test methods.
This document is applicable to the production, inspection, and quality evaluation of polished wafers with diameters of 25.4 mm and 50.8 mm used in microwave power devices.
Development Information
Referenced Standards
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope
GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers
GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced