GB/T 11093-1989
Replaced
GB/T 30858-2014
Replaced
National standards
GB/T 30858-2014 Polished mono-crystalline sapphire substrate product
GB/T 30858-2014 Polished mono-crystalline sapphire substrate product
Basic Information
Standard Code:
GB/T 30858-2014
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2014-07-24
Implement Date:
2015-04-01
Pages:
24 pages
Scope
This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) for polished sapphire single-crystal substrates.
This standard applies to single-sided polished sapphire substrates (hereinafter referred to as sapphire substrates).
Development Information
Superseded by the following standards
Referenced Standards
GB/T 1031-1995 Surface roughness parameters and their values
GB/T 1031-2009 Geometrical Product Specifications (GPS)—Surface texture:Profile method—Surface roughness parameters and their values
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced