GB/T 11093-1989
Replaced
GB/T 30858-2025
Active
National standards
GB/T 30858-2025 Polished mono-crystalline sapphire substrate wafer
GB/T 30858-2025 Polished mono-crystalline sapphire substrate wafer
Basic Information
Standard Code:
GB/T 30858-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2025-10-31
Implement Date:
2026-05-01
Pages:
16 pages
Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content for sapphire single-crystal substrate polishing wafers (hereinafter referred to as "sapphire substrate wafers").
This document is applicable to sapphire substrate wafers with a diameter not exceeding 200 mm. The products are mainly used for epitaxial growth of semiconductor films, production of patterned sapphire substrates, and sapphire bonded substrates, etc.
Development Information
Replace the following standards
Referenced Standards
GB/T 1031-1995 Surface roughness parameters and their values
GB/T 1031-2009 Geometrical Product Specifications (GPS)—Surface texture:Profile method—Surface roughness parameters and their values
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates
GB/T 31092-2014 Monocrystalline sapphire ingot
GB/T 31092-2022 Monocrystalline sapphire bar
GB/T 31352-2014 Test methods for warp of sapphire substrates
GB/T 31353-2014 Test methods for bow of sapphire substrates
GB/T 33236-2016 Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method
GB/T 33763-2017 Test method for dislocation density of sapphire single crystal
GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
GB/T 34612-2017 Measurement method for X-ray double crystal diffraction rocking curve of sapphire crystals
YS/T 26-1992 Test Method for the Edge Contour of Silicon Wafers
YS/T 26-2016 Test methods for edge contour of silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced