GB/T 11093-1989
Replaced
GB/T 35305-2017
Active
National standards
GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
Basic Information
Standard Code:
GB/T 35305-2017
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2017-12-29
Implement Date:
2018-07-01
Pages:
10 pages
Scope
This standard specifies the requirements, test methods, inspection rules, and marking, packaging, transportation, storage, and quality certificates for GaAs single-crystal wafers used in solar cells. This standard applies to GaAs single-crystal wafers used in solar cells (hereinafter referred to as GaAs wafers).
Development Information
Referenced Standards
GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
GB/T 6621-2009 Testing methods for surface flatness of silicon slices
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 25075-2010 Gallium arsenide single crystal for solar cell
GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
YS/T 26-1992 Test Method for the Edge Contour of Silicon Wafers
YS/T 26-2016 Test methods for edge contour of silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced