GB/T 11093-1989
Replaced
GB/T 29504-2013
Active
National standards
GB/T 29504-2013 300 mm monocrystalline silicon
GB/T 29504-2013 300 mm monocrystalline silicon
Basic Information
Standard Code:
GB/T 29504-2013
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2013-05-09
Implement Date:
2014-02-01
Pages:
6 pages
Scope
This standard specifies the technical requirements, test methods, inspection rules, and marking, packaging, transportation, and storage for 300 mm diameter, P-type, single-crystal silicon with a crystal orientation of 100 and a resistivity of 0.5 Ω·cm to 20 Ω·cm.
This standard applies to single-crystal silicon prepared by the direct-pulling method, which is mainly used for manufacturing 300 mm silicon wafers that meet the technical requirements of integrated circuits (ICs) with a line width of 0.13 μm or less.
Development Information
Referenced Standards
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
YS/T 679-2018 The test of minority carrier diffusion length in non-intrinsic semiconductor using surface photovoltage method
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced