GB/T 30856-2025 Active National standards

GB/T 30856-2025 GaAs substrates for LED epitaxial chips

GB/T 30856-2025 GaAs substrates for LED epitaxial chips

Publish Date: 2025-08-01 Implement Date: 2026-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30856-2025
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Compound semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2025-08-01
Implement Date: 2026-02-01
Pages: 12 pages

Scope

This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and accompanying documents and order forms for gallium arsenide single-crystal substrates used in LED epitaxial chips (hereinafter referred to as "gallium arsenide substrates").
This document is applicable to the production, testing, and quality evaluation of gallium arsenide single-crystal substrates used in LED epitaxial chips.

Development Information

Word Count: 15 Thousand words Pages: 12 pages

Replace the following standards

Referenced Standards

GB/T 191-2000 Packaging—Pictorial marking for handling of goods GB/T 191-2008 Packaging—Pictorial marking for handling of goods GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6621-1995 Test methods for surface flatness of silicon polished slices GB/T 6621-2009 Testing methods for surface flatness of silicon slices GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 20228-2006 Gallium arsenide single crystal GB/T 20228-2021 Gallium arsenide single crystal GB/T 191-2025 Graphical symbols marking for handling and storage of packages GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

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