GB/T 30856-2014 Replaced National standards

GB/T 30856-2014 GaAs substrates for LED epitaxial chips

GB/T 30856-2014 GaAs substrates for LED epitaxial chips

Publish Date: 2014-07-24 Implement Date: 2015-04-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30856-2014
Standard Type: National standards
Standard Status: Replaced
is_force_gb: no
CCS Name: Compound semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2014-07-24
Implement Date: 2015-04-01
Pages: 16 pages

Scope

This standard specifies the requirements, inspection methods and rules for gallium arsenide single crystal substrates (hereinafter referred to as substrates) used in LED epitaxial chips, as well as the requirements for marking, packaging, transportation, storage, quality certificates, and the contents of purchase orders (or contracts).
This standard applies to gallium arsenide single crystal substrates used in LED epitaxial chips.

Development Information

Word Count: 22 Thousand words Pages: 16 pages

Superseded by the following standards

Referenced Standards

SEMI M9.7-0200 GB/T 191-2000 Packaging—Pictorial marking for handling of goods GB/T 191-2008 Packaging—Pictorial marking for handling of goods GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6621-1995 Test methods for surface flatness of silicon polished slices GB/T 6621-2009 Testing methods for surface flatness of silicon slices GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 191-2025 Graphical symbols marking for handling and storage of packages GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

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