GB/T 11093-1989
Replaced
GB/T 43885-2024
Active
National standards
GB/T 43885-2024 Silicon carbide epitaxial wafers
GB/T 43885-2024 Silicon carbide epitaxial wafers
Basic Information
Standard Code:
GB/T 43885-2024
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2024-04-25
Implement Date:
2024-11-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分会(SAC/TC 203/SC 2)
Pages:
11 pages
Scope
本文件规定了碳化硅外延片的产品分类、技术要求、试验方法、检验规则及标志、包装、运输与贮存、随行文件和订货单内容。本文件适用于在导电型碳化硅衬底上，生长碳化硅同质外延层的外延片，产品用于制作碳化硅电力电子器件。
Development Information
Drafting Units:
南京国盛电子有限公司、广东天域半导体股份有限公司、上海天岳半导体材料有限公司、北京天科合达半导体股份有限公司、瀚天天成电子科技(厦门)股份有限公司、ＴＣＬ环鑫半导体(天津)有限公司、有色金属技术经济研究院有限责任公司、南京盛鑫半导体材料有限公司、山西烁科晶体有限公司、河北普兴电子科技股份有限公司、安徽长飞先进半导体有限公司、中电化合物半导体有限公司、上海合晶硅材料股份有限公司、江苏华兴激光科技有限公司、杭州乾晶半导体有限公司、湖南三安半导体有限责任公司、浙江晶睿电子科技有限公司、宁波合盛新材料有限公司、沈阳星光技术陶瓷有限公司、深圳基本半导体有限公司、海迪科(南通)光电科技有限公司、哈尔滨科友半导体产业装备与技术研究院有限公司、连科半导体有限公司
Drafting Persons:
李国鹏、仇光寅、刘勇、骆红、李素青、丁雄杰、舒天宇、佘宗静、冯淦、杨玉聪、王银海、侯晓蕊、薛宏伟、刘红超、金向军、尚海波、刘薇、王岩、徐所成、李毕庆、陈浩、袁肇耿、周勋、刘长春、汪之涵、黄勤金、赵丽丽、胡动力、和巍巍
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers
GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced